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Intersil Electronic Components Datasheet

RFP2N20L Datasheet

2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET

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RFP2N20L pdf
Data Sheet
RFP2N20L
July 1999 File Number 2875.2
2A, 200V, 3.500 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP2N20L N-Channel enhancement mode silicon gate
power field effect transistor is specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09532.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N20L
TO-220AB
RFP2N20L
NOTE: When ordering, include the entire part number.
Features
• 2A, 200V
• rDS(ON) = 3.500
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-256
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP2N20L Datasheet

2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET

No Preview Available !

RFP2N20L pdf
RFP2N20L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage RGS = 20K(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Linearly Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFP2N20L
200
200
±10
2
4
25
0.2
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
SYMBOL
TEST CONDITIONS
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V,
VGS = ±10V, VDS = 0
ID = 2A, VGS = 5V
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
ID = 2A, VGS = 5V (Figures 6, 7)
ID = 2A, VDD = 100V, RG = 6.25, VGS = 5V
RL = 50(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
CRSS
RθJC
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Reverse Recovery Time
trr ISD = 2A, dlSD/dt = 50A/µs
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
200 - - V
1-2 V
- - 1 µA
- - 25 µA
- - ±100 nA
- -7 V
- - 3.500
- 10 25 ns
- 10 30 ns
- 25 40 ns
- 20 25 ns
- - 200 pF
- - 60 pF
- - 35 pF
- - 5 oC/W
MIN TYP MAX UNITS
- - 1.4 V
- 200 -
ns
6-257


Part Number RFP2N20L
Description 2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 5 Pages
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