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TC1101 Datasheet Preview

TC1101 Datasheet

Low Noise and Medium Power GaAs FETs

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TC1101 pdf
TRANSCOM
TC1101
Low Noise and Medium Power GaAs FETs
January 2002
FEATURES
Low Noise Figure:
NF = 0.5 dB Typical at 12 GHz
PHOTO ENLARGEMENT
High Associated Gain:
Ga = 12 dB Typical at 12 GHz
High Dynamic Range:
1 dB Compression Power P-1 = 18 dBm at 12 GHz
Breakdown Voltage: BVDGO 9 V
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
100 % DC Tested
DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All
bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
Conditions
NF
Ga
P1dB
GL
IDSS
gm
VP
BVDGO
Rth
Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
Output Power at 1dB Gain Compression Point , f = 12GHz
VDS = 4 V, IDS = 25 mA
Linear Power Gain, f = 12GHz
VDS = 4 V, IDS = 25 mA
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
Drain-Gate Breakdown Voltage at IDGO =0.08 mA
Thermal Resistance
MIN
TYP
MAX
0.5 0.7
10 12
17 18
12 14
40
55
-1.0
9 12
90
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
3



Transcom
Transcom

TC1101 Datasheet Preview

TC1101 Datasheet

Low Noise and Medium Power GaAs FETs

No Preview Available !

TC1101 pdf
TC1101
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
Parameter
Rating
VDS Drain-Source Voltage
7.0 V
VGS Gate-Source Voltage
-3.0 V
IDS Drain Current
IDSS
IGS Gate Current
160 µA
Pin RF Input Power, CW
14 dBm
PT Continuous Dissipation
150 mW
TCH Channel Temperature
175 °C
TSTG Storage Temperature
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 2 V, IDS = 10 mA
Frequency NFopt
GA
(GHz)
(dB) (dB)
Γopt
MAG ANG
Rn/50
2
0.38 19.8
0.99
4 1.52
4
0.40 17.5
0.90
9 1.05
6 0.42 15.6 0.82 18 0.77
8 0.45 13.9 0.76 29 0.61
10 0.50 13.1 0.69 43 0.51
12 0.55 12.4 0.63 55 0.44
14 0.64 11.7 0.56 65 0.37
16 0.78 11.1 0.45 76 0.30
18 0.95 10.6 0.34 90 0.24
CHIP DIMENSIONS
D
SG S
250 ± 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 55 x 50
Drain Pad: 55 x 50
Source Pad: 55 x 60
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
4


Part Number TC1101
Description Low Noise and Medium Power GaAs FETs
Maker Transcom
Total Page 6 Pages
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