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TC1100H Datasheet Preview

TC1100H Datasheet

(TC1xxxH) SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

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TC1100H pdf
LITE-ON
SEMICONDUCTOR
TC0640H thru TC3500H
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
Bi-Directional
VDRM - 58 to 320 Volts
IPP - 100 Amperes
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 100A @ 10/1000us or 400 @
www.DataSheet4U8.c/2o0mus
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
B
G
H
SMC
A
F
E
SMC
DIM. MIN. MAX.
A 6.60 7.11
C B 5.59 6.22
C 2.92 3.18
D 0.15 0.31
E 7.75 8.13
F 0.05 0.20
G 2.01 2.62
D H 0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
THERMAL RESISTANCE
SYMBOL
IPP
ITSM
TJ
TSTG
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
SYMBOL
Rth(J-L)
Rth(J-A)
VBR/TJ
MAXIMUM RATED SURGE WAVEFORM
W AVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
IPP (A)
500
400
250
200
160
100
100
50
0
tr
VALUE
100
50
-40 to +150
-55 to +150
VALUE
20
100
0.1
UNIT
A
A
UNIT
/W
/W
%/
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
Half value
tp
TIME
REV. 0, 03-Dec-2001, KSWC02



Lite-On Technology
Lite-On Technology

TC1100H Datasheet Preview

TC1100H Datasheet

(TC1xxxH) SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

No Preview Available !

TC1100H pdf
ELECTRICAL CHARACTERISTICS @ TA= 25unless otherwise specified
TC0640H thru TC3500H
PARAMETER
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ VDRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ IT=1.0A
BREAKOVER
CURRENT
HOLDING
CURRENT
OFF-STATE
CAPACITANCE
SYMBOL
UNITS
www.DataSheet4U.comLIMIT
VDRM
Volts
Max
IDRM
uA
Max
VBO
Volts
Max
VT
Volts
Max
IBO- IBO+ IH- IH+
mA mA mA mA
Min Max
Min Max
Co
pF
Typ
TC0640H
TC0720H
TC0900H
TC1100H
TC1300H
TC1500H
TC1800H
TC2300H
TC2600H
TC3100H
TC3500H
58
65
75
90
120
140
160
190
220
275
320
5
77
3.5 50 800 150 800
200
5
88
3.5 50 800 150 800
200
5
98
3.5 50 800 150 800
200
5
130
3.5 50 800 150 800
120
5
160
3.5 50 800 150 800
120
5
180
3.5 50 800 150 800
120
5
220
3.5 50 800 150 800
120
5
265
3.5 50 800 150 800
80
5
300
3.5 50 800 150 800
80
5
350
3.5 50 800 150 800
80
5
400
3.5 50 800 150 800
80
SYMBOL
VDRM
IDRM
VBR
IBR
VBO
IBO
IH
VT
IPP
CO
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Note: 1
Off state capacitance
Note: 2
I
IPP
IBO
IH
IBR IDRM
VBR
V
VT
VDRM
VBO
REV. 0, 03-Dec-2001, KSWC02
NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias.


Part Number TC1100H
Description (TC1xxxH) SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
Maker Lite-On Technology
Total Page 4 Pages
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