http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Toshiba Electronic Components Datasheet

K1382 Datasheet

2SK1382

No Preview Available !

K1382 pdf
2SK1382
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1382
Relay Drive, Motor Drive and DCDC Converter
Applications
Unit: mm
z 4-V gate drive
z Low drainsource ON resistance
: RDS (ON) = 15 m(typ.)
z High forward transfer admittance
: |Yfs| = 47 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
100
100
±20
60
240
200
150
55 to 150
V
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.625
35.7
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-09-29



Toshiba Electronic Components Datasheet

K1382 Datasheet

2SK1382

No Preview Available !

K1382 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±20 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 30 A
VGS = 10 V, ID = 30 A
VDS = 10 V, ID = 30 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 80 V, VGS = 10 V, ID = 60 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 60 A, VGS = 0 V
IDR = 60 A, VGS = 0 V
dIDR / dt = 50 A / μs
Marking
2SK1382
Min Typ. Max Unit
— — ±100 nA
— — 100 μA
100 —
V
0.8 — 2.0
V
— 20 29
m
— 15 20
30 47 —
S
— 7000 —
— 400 —
pF
— 2700 —
— 16 —
— 55 —
ns
— 80 —
— 280 —
— 176 —
— 132 —
— 44 —
nC
Min Typ. Max Unit
— — 60 A
— — 240 A
— — 1.6 V
— 300 —
ns
— 0.75 —
μC
TOSHIBA
2SK1382
JAPAN
Note 2: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Note 2
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29



Toshiba Electronic Components Datasheet

K1382 Datasheet

2SK1382

No Preview Available !

K1382 pdf
2SK1382
3 2009-09-29




Part Number K1382
Description 2SK1382
Maker Toshiba Semiconductor
Total Page 6 Pages
PDF Download
K1382 pdf
Download PDF File
K1382 pdf
View for Mobile






Related Datasheet

1 K1381 2SK1381 Toshiba Semiconductor
Toshiba Semiconductor
K1381 pdf
2 K1382 2SK1382 Toshiba Semiconductor
Toshiba Semiconductor
K1382 pdf
3 K1388 2SK1388 Fuji Electric
Fuji Electric
K1388 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components