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Toshiba Electronic Components Datasheet

K1381 Datasheet

2SK1381

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K1381 pdf
2SK1381
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1381
Relay Drive, Motor Drive and DCDC Converter
Applications
Unit: mm
4 V gate drive
Low drainsource ON resistance : RDS (ON) = 25 m(typ.)
High forward transfer admittance : |Yfs| = 33 S (typ.)
www.DataSheet4U.cLoomw leakage current
Enhancementmode
: IDSS = 100 µA (max) (VDS = 100 V)
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
Thermal Characteristics
Characteristics
Symbol
100
100
±20
50
200
150
150
55~150
Max
V
V
V
A
W
°C
°C
Unit
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02


Toshiba Electronic Components Datasheet

K1381 Datasheet

2SK1381

No Preview Available !

K1381 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
www.DataSheet4U.com
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±20 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 25 A
VGS = 10 V, ID = 25 A
VDS = 10 V, ID = 25 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 80 V, VGS = 10 V, ID = 50 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 50 A, VGS = 0 V
IDR = 50 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SK1381
Min Typ. Max Unit
— — ±50
— — 100
100 —
0.8 — 2.0
— 31 46
— 25 32
20 33 —
— 3700 —
— 580 —
— 1500 —
nA
µA
V
V
m
S
pF
— 16 —
— 46 —
ns
— 60 —
— 185 —
— 88 —
— 62 —
— 26 —
nC
Min Typ. Max Unit
— — 50 A
— — 200 A
— — 1.6 V
— 280 —
ns
— 0.56 —
µC
K1381
Lot Number
Type
Month (starting from alphabet A)
Year (last number of the christian era)
2 2002-09-02


Part Number K1381
Description 2SK1381
Maker Toshiba Semiconductor
Total Page 6 Pages
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