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SavantIC
SavantIC

2SA1110 Datasheet Preview

2SA1110 Datasheet

SILICON POWER TRANSISTOR

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2SA1110 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SC2590
·Excellent current IC characteristics of forward
current transfer ratio hFE vs. collector
·High transition frequency fT
·Optimum for the driver stage of a 40w to
60w output amplifier
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1110
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
Note) *: Without heat sink
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-5
-0.5
-1.0
1.2*
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SA1110 Datasheet Preview

2SA1110 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SA1110 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1110
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-100µA;IB=0
-120
V
V(BR)EBO Emitter-base breakdown voltage
IE=-10µA ;IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-0.3A ;IB=-30mA
-1.0 V
VBEsat
Base-emitter saturation voltage
IC=-0.3A ;IB=-30mA
-1.2 V
hFE-1
hFE-2
DC current gain
DC current gain
IC=-150mA ; VCE=-10V
IC=-0.5A ; VCE=-5V
65 330
50 100
COB Output capacitance
IE=0 ; VCB=-10V;f=1MHz
30 pF
fT Transition frequency
IC=-50mA ; VCB=-10V,
200 MHz
hFE-1 Classifications
PQR
S
65-110 90-155 130-220 185-330
2


Part Number 2SA1110
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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