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Inchange Semiconductor
Inchange Semiconductor

2SA1112 Datasheet Preview

2SA1112 Datasheet

POWER TRANSISTOR

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2SA1112 pdf
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1111 2SA1112
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2591/2592
·Good linearity of hFE
·High VCEO
APPLICATIONS
·For audio frequency, high power
amplifiers application
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA1111
2SA1112
Open emitter
VCEO
Collector-emitter voltage
2SA1111
2SA1112
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-150
-180
-150
-180
-5
-1
-1.5
20
150
-55~150
UNIT
V
V
V
A
A
W



Inchange Semiconductor
Inchange Semiconductor

2SA1112 Datasheet Preview

2SA1112 Datasheet

POWER TRANSISTOR

No Preview Available !

2SA1112 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1111
2SA1112
IC=-0.1mA ,IB=B 0
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBEsat Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
COB Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT Transition frequency
IC=50mA ; VCE=-10V
‹ hFE-1 Classifications
PQ
R
S
65-110 90-155 130-220 185-330
Product Specification
2SA1111 2SA1112
MIN TYP. MAX UNIT
-150
-180
V
-5 V
-0.5 -2.0
V
-1.0 -2.0
V
-1 μA
-1 μA
65 330
50
30 pF
200 MHz
2


Part Number 2SA1112
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 4 Pages
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