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SFF75N06Z Datasheet Preview

SFF75N06Z Datasheet

N-Channel Power MOSFET

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SFF75N06Z pdf
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SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Advanced high-cell density withstands high energy
• Very low conduction and switching losses
• Fast recovery drain-to-source diode with soft recovery
• Rugged construction with poly silicon gate
• Ultra low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV and Space Level screening available
SFF75N06M
SFF75N06Z
75 AMP
60 VOLTS
15m
N-CHANNEL
POWER MOSFET
TO-254 (M)
TO-254Z (Z)
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Drain to Gate Voltage (RGS = 1.0 mΩ)
SYMBOL
VDS
VDG
VALUE
60
60
UNIT
Volts
Volts
Gate to Source Voltage
VGS + 20 Volts
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
@ TC = 25oC
@ TC = 55oC
ID
Top & Tstg
RΘJC
PD
561/
-55 to +150
1
125
95
Amps
oC
oC/W
Watts
CASE OUTLINE: TO-254 (Sufix M)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
CASE OUTLINE: TO-254Z (Sufix Z)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Available with Glass or Ceramic Seals. Contact Facory for details.
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00311B



SSDI
SSDI

SFF75N06Z Datasheet Preview

SFF75N06Z Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF75N06Z pdf
www.DataSSheFetF4U7.c5omN06M
SFF75N06Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID = 250µA)
Drain to Source on State Resistance
(VGS = 10 V,Tc = 150oC)
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
SYMBOL MIN
TYP
MAX UNIT
ID=37.5A
ID=75A
ID=37.5A
BVDSS
RDS(on)
ID(on)
60
-
-
-
75
-
13
15
19
-
-V
-
- m
-
-A
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Forward Transconductance
(VDS > ID(on) X RDS (on) Max, IDS=60% rated ID)
VGS(th)
gfs
2
15
- 4.0 V
35 - Smho
Zero Gate Voltage Drain Current
(VDS = 80% rated voltage, VGS = 0V)
(VDS = 80% rated VDS, VGS = 0V, TA = 125oC)
IDSS
-
-
-
-
250
1000
µA
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
-
-
-
-
+100
-100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DelayTime
Fall Time
Diode Forvard Voltage
(IS = rated ID, VGS = 0V, TJ = 25oC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 10 V
50% rated VDS
Rated ID
VDD =50%
rated VDS
50% rated ID
RG=6.2
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
80 120
13 17 nC
40 64
20 27
35
65
66
100
nsec
40 60
VSD - 1.47 1.4 V
TJ =25oC
IF = 10
di/dt = 100A/µsec
trr
QRR
-
70 150 nsec
VGS =0 Volts
Ciss
-
2600 2900
VDS =25 Volts
Coss
-
700 1100 pF
f =1 MHz
Crss -
260 275
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Maximum current limited by package, die rated at 75A.


Part Number SFF75N06Z
Description N-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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