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SFF75N06-28 Datasheet Preview

SFF75N06-28 Datasheet

N-Channel Power MOSFET

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SFF75N06-28 pdf
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PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Drain to Gate Voltage (RGS = 1.0 mS)
Gate to Source Voltage
Continuous Drain Current @ TC = 25oC
Operating and Storage Temperature
Thermal Resistance, Junction to Case (All Four)
Total Device Dissipation @ TC = 25oC
PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT:
SOURCE: 1, 15 - 28
DRAIN: 5 - 11
GATE: 2, 3, 13, 14
NOTE:
All drain/source pins must be connected
on the PC board in order to maximize
current carrying capability and to mini-
mize RDS (on)
SFF75N06-28
30 AMP 1/
60 VOLTS
25mS
N-CHANNEL
POWER MOSFET
28 PIN CLCC
SYMBOL
VDS
VDG
VGS
ID
Top & Tstg
R2JC
PD
VALUE
100
60
±20
30
-55 to +150
3.5
35
UNIT
Volts
Volts
Volts
Amps
oC
oC/W
Watts
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0001A



SSDI
SSDI

SFF75N06-28 Datasheet Preview

SFF75N06-28 Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF75N06-28 pdf
www.DataSheet4U.com
SFF75N06-28
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
RATING
SYMBOL MIN
TYP
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250:A)
BVDSS
60
-
Drain to Source
ON State Resistance 2/
(VGS = 10 V)
60% of Rated ID, TC = 25oC
Rated ID, TC = 25oC
60% of Rated ID, TC = 150oC
RDS(on)
-
-
-
23
25
27
Gate Threshold Voltage
(VDS =VGS, ID =250:A)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max,
IDS =60% rated ID)
VGS(th)
gfs
2
15
-
35
Zero Gate Voltage Drain Current
(VDS =80% rated VDS, VGS =0 V, TA = 25oC )
(VDS =80% rated VDS, VGS =0 V, TA = 125oC )
IDSS
-
-
-
-
MAX
-
25
27
-
4
-
UNIT
V
mS
V
S(É)
10
100
:A
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
-
-
-
-
100
100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS =10 Volts
50% rated VDS
Rated ID
Qg
Qgs
Qgd
-
-
-
83 100
13 20 nC
40 55
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
VDD =50%
rated VDS
rated ID
RG = 6.2 S
td (on)
tr
td (off)
tf
-
-
-
-
20 40
35
65
70
130
nsec
40 80
Diode Forward Voltage
(IS = rated ID, VGS = 0V, TJ = 25oC)
VSD - 1.47 1.6 V
Diode Reverse Recovery Time
Reverse Recovery Charge
TJ =25oC
IF = 10A
trr - 70 150 nsec
di/dt = 100A/:sec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Ciss
Coss
Crss
-
-
-
2600 2900
700 1100 pF
260 275
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Die Rating: 75Amps.
2/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize
RDS(on) and maximize current carrying capability.


Part Number SFF75N06-28
Description N-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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