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RF Micro Devices
RF Micro Devices

RF2115L Datasheet Preview

RF2115L Datasheet

HIGH POWER UHF AMPLIFIER

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RF2115L pdf
RF2115L
2 HIGH POWER UHF AMPLIFIER
Typical Applications
• Analog Communication Systems
• Analog Cellular Systems (AMPS & TACS)
• 900MHz Spread-Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• Portable Battery-Powered Equipment
2
Product Description
The RF2115L is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters or ISM applications operating at
915MHz. The device is packaged in a 16-lead ceramic
quad leadless chip carrier with a backside ground. The
device is self-contained with the exception of the output
matching network and power supply feed line. A two-bit
digital control provides 4 levels of power control, in 10dB
steps.
.150
.050
.258
.242
1
.258
.242
R.008
.033
.017
.050
.022
.018
.025
.075
.065
.098
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
1 16 15 14
VCC3 2
VCC1 3
BIAS
CIRCUIT
13 RF OUT
12 GND
GND 4
11 RF OUT
PD 5
GAIN CONTROL
10 RF OUT
6789
Functional Block Diagram
.098
Package Style: QLCC-16
Features
• Single 5V to 6.5V Supply
• Up to 1.0W CW Output Power
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Output Power
• Small Package Outline (0.25" x 0.25")
Ordering Information
RF2115L
High Power UHF Amplifier
RF2115L PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B1 010329
2-39



RF Micro Devices
RF Micro Devices

RF2115L Datasheet Preview

RF2115L Datasheet

HIGH POWER UHF AMPLIFIER

No Preview Available !

RF2115L pdf
RF2115L
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (VCC)
Power Down Voltage (VPD)
Control Voltage (G10, G20)
DC Supply Current
2 Input RF Power
Output Load
Operating Case Temperature
Operating Ambient Temperature
Storage Temperature
-0.5 to +8.5
-0.5 to +5.0
-0.5 to +5.5
700
+12
20:1
-40 to +100
-40 to +85
-40 to +150
Unit
VDC
V
V
mA
dBm
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Frequency Range
Maximum CW Output Power
Specification
Min.
Typ.
Max.
430 to 930
+30.5
Total CW Efficiency at Maximum
Output
Small-signal Gain
Second Harmonic
Third Harmonic
Fourth Harmonic
Input VSWR
Input Impedance
Power Control
Output Power
Power Supply Current
Idle Current
Power Down “ON”
Power Down “OFF”
Power Down Control
Power Down “ON”
Power Down “OFF”
Current Drain
40
+30
+17
+7
-4
350
75
35
21
30
0
0
+30
+29.5
+28.5
48
33
-23
-36
-35
<2:1
50
+30.5
+20
+11
+2.5
415
125
56
38
55
5.0
5.0
1
+36
+23
+13
+6
600
175
90
50
80
0.2
0.2
10
Unit
MHz
dBm
dBm
dBm
dBm
%
dB
dBc
dBc
dBc
dBm
dBm
dBm
dBm
mA
mA
mA
mA
mA
V
V
V
V
µA
Condition
T=25 °C, VCC=5.8V, VPD=5.0V, ZLOAD=9,
PIN=0dBm, Freq=840MHz
Note that increasing VCC does not result in
higher output power; power may actually
decrease.
VCC=5.8V, ZLOAD=12
VCC=5.0V, ZLOAD=9
VCC=5.0V, ZLOAD=12
Without external second harmonic trap
G20
G10
11
10
01
00
11
10
01
00
11
Voltage supplied to the input; Part is “ON”
Voltage supplied to the input; Part is “OFF”
Voltage supplied to the input; Part is “ON”
Voltage supplied to the input; Part is “OFF”
VPD < 0.1 VDC
2-40
Rev B1 010329


Part Number RF2115L
Description HIGH POWER UHF AMPLIFIER
Maker RF Micro Devices
Total Page 7 Pages
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