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RF Micro Devices
RF Micro Devices

RF2115 Datasheet Preview

RF2115 Datasheet

HIGH POWER UHF AMPLIFIER

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RF2115 pdf
2
Typical Applications
• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
RF2125
HIGH POWER LINEAR AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
2
Product Description
The RF2125 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta-
tions requiring linear amplification operating between
1500MHz and 2200MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead
ceramic package with a backside ground. The device is
self-contained with the exception of the output matching
network and power supply feed line. It produces a typical
output power level of 1W.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
8 RF OUT
RF IN 2
7 RF OUT
PC 3
VCC 4
BIAS
CIRCUIT
6 RF OUT
5 RF OUT
PACKAGE BASE
GND
Functional Block Diagram
.315
.305
.166
SQ
1
.050
.057 MAX
.004
.017 .000
.013
4°MAX
0°MIN
.180 SQ MAX
Metal lid and base, gold plated
.017 .006
.013 .004
Package Style: SOP-8-C
Features
• Single 2.7V to 7.5V Supply
• 1W Output Power
• 14dB Gain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation
Ordering Information
RF2125
High Power Linear Amplifier
RF2125 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A7 010112
2-61



RF Micro Devices
RF Micro Devices

RF2115 Datasheet Preview

RF2115 Datasheet

HIGH POWER UHF AMPLIFIER

No Preview Available !

RF2115 pdf
RF2125
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (VCC)
Power Control Voltage (VPC)
DC Supply Current
Input RF Power
2 Output Load
Operating Case Temperature
Operating Ambient Temperature
Storage Temperature
-0.5 to +7.5
-0.5 to +3.6V
450
+20
20:1
-40 to +100
-40 to +85
-40 to +150
Unit
VDC
V
mA
dBm
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Frequency Range
Maximum Output Power
Maximum Output Power
Maximum Output Power
Total Power Added Efficiency
Total Power Added Efficiency
Total Power Added Efficiency
Small-signal Gain
Second Harmonic
Third Harmonic
Fourth Harmonic
Isolation
Input VSWR
Two-tone Specification
IM3
IM5
IM7
Power Control
VPC
PC Current
Power Control “OFF”
Power Supply
Power Supply voltage
Supply Current
Power Down Current
Specification
Min.
Typ.
Max.
+29.3
42
12
1500 to 2200
+28.5
+29.5
+30
45
45
45
14
-40
-45
-35
15
1.5:1
-25 -30
-35
-45
1.5 3.3 3.5
1
2
0.2 0.5
2.7 to 7.5
270 360 440
0.5 10
Unit
MHz
dBm
dBm
dBm
%
%
%
dB
dBc
dBc
dBc
dB
dBc
dBc
dBc
V
mA
mA
V
V
mA
µA
Condition
T=25 °C, VCC=6.0V, VPC=3.5V,
ZLOAD=12, PIN = 0dBm, Freq=1885MHz,
Idle current=180mA
VCC=3.6V, PIN=+17dBm
VCC=4.8V, PIN=+17dBm
VCC=6.0V, PIN=+17dBm
Maximum output, VCC=3.6V
Maximum output, VCC=4.8V
Maximum output, VCC=6.0V
VPC = 0.2 V
With external matching network; see appli-
cation schematic
POUT=+23.5dBm for each tone
POUT=+24dBm for each tone
POUT=+24dBm for each tone
To obtain 180mA idle current
VPC = 2.0 V
VPC = 3.5 V
Threshold voltage at device input
POUT=+30dBm, VCC=6.0V
VPC = 0.2 V
2-62
Rev A7 010112


Part Number RF2115
Description HIGH POWER UHF AMPLIFIER
Maker RF Micro Devices
Total Page 5 Pages
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