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Panasonic Electronic Components Datasheet

2SD1996 Datasheet

Silicon PNP epitaxial planer type(For low-frequency power amplification)

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2SD1996 pdf
Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Low ON resistance Ron.
q High foward current transfer ratio hFE.
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
25
20
12
1
0.5
600
150
–55 ~ +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
V
A
A
mW
˚C
˚C
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Ron*3
VCB = 25V, IE = 0
100 nA
IC = 10µA, IE = 0
25
V
IC = 1mA, IB = 0
20
V
IE = 10µA, IC = 0
12
V
VCE = 2V, IC = 0.5A*2
200 800
VCE = 2V, IC = 1A*2
60
IC = 0.5A, IB = 20mA
0.13 0.4
V
IC = 0.5A, IB = 50mA
1.2 V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f= 1MHz
10 pF
1.0
*1hFE1 Rank classification
*3Ron Measurement circuit
1k
IB=1mA
*2 Pulse measurement
Rank
hFE1
RST
200 ~ 350 300 ~ 500 400 ~ 800
VB VV VA
Ron=
VB
VA–VB
!1000()
f=1kHz
V=0.3V
1


Panasonic Electronic Components Datasheet

2SD1996 Datasheet

Silicon PNP epitaxial planer type(For low-frequency power amplification)

No Preview Available !

2SD1996 pdf
Transistor
PC — Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
1 Ta=–25˚C
0.3
25˚C
75˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
24
IE=0
f=1MHz
Ta=25˚C
20
16
12
8
4
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
1.2
Ta=25˚C
IB=4.0mA
1.0 3.5mA
3.0mA
0.8 2.5mA
2.0mA
0.6
1.5mA
0.4 1.0mA
0.5mA
0.2
0
0123456
Collector to emitter voltage VCE (V)
1200
1000
hFE — IC
VCE=2V
800
Ta=75˚C
600 25˚C
–25˚C
400
200
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
30
10
Ron — IB
Ron measuring circuit
IB=1mA
VB V VA
f=1kHz
V=0.3V
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Base current IB (mA)
10
2SD1996
VCE(sat) — IC
100
IC/IB=25
30
10
3
1
0.3 Ta=75˚C
25˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IE
400
VCB=10V
Ta=25˚C
350
300
250
200
150
100
50
0
–1 –3
–10 –30 –100
Emitter current IE (A)
2


Part Number 2SD1996
Description Silicon PNP epitaxial planer type(For low-frequency power amplification)
Maker Panasonic Semiconductor
Total Page 2 Pages
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