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Panasonic Electronic Components Datasheet

2SD1993 Datasheet

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

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2SD1993 pdf
Transistor
2SD1993
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
55
55
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = 20V, IE = 0
100 nA
VCE = 20V, IB = 0
1 µA
IC = 10µA, IE = 0
55
V
IC = 2mA, IB = 0
55
V
IE = 10µA, IC = 0
7
V
VCE = 10V, IC = 2mA
210 650
IC = 100mA, IB = 10mA
1.0 V
VCB = 10V, IE = –2mA, f = 200MHz 200 MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 210 ~ 340
S
290 ~ 460
T
360 ~ 650
1


Panasonic Electronic Components Datasheet

2SD1993 Datasheet

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

No Preview Available !

2SD1993 pdf
Transistor
PC — Ta
500
Ta=25˚C
400
300
200
100
0
0 40 80 120 160 200
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
0.1 25˚C
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
10
IE=0
f=1MHz
Ta=25˚C
8
6
4
2
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
120
IB=400µA
Ta=25˚C
350µA 300µA
100
250µA
80
200µA
60 150µA
40 100µA
20 50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1000
800
hFE — IC
VCE=5V
600
Ta=75˚C
400 25˚C
–25˚C
200
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NF — IE
8
VCE=5V
7 Rg=1k
Ta=25˚C
6
5
4
f=100Hz
3
2
1kHz
1
10kHz
0
–10 –30 –100 –300 –1000
Emitter current IE (µA)
2SD1993
IC — VBE
120
25˚C
VCE=5V
100
Ta=75˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
400
VCB=5V
Ta=25˚C
350
300
250
200
150
100
50
0
–1 –3
–10 –30 –100
Emitter current IE (mA)
NV — IC
120
VCE=10V
GV=80dB
Function=FLAT
100
80
Rg=100k
60
22k
40
5k
20
0
0.01 0.03 0.1 0.3
Collector current IC (µA)
1
2


Part Number 2SD1993
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
Maker Panasonic Semiconductor
Total Page 2 Pages
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