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National Semiconductor Electronic Components Datasheet

7410 Datasheet

Triple 3 Input NAND Gates

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7410 pdf
June 1989
5410 DM5410 DM7410
Triple 3-Input NAND Gates
General Description
This device contains three independent gates each of which
performs the logic NAND function
Features
Y Alternate Military Aerospace device (5410) is available
Contact a National Semiconductor Sales Office Distrib-
utor for specifications
Connection Diagram
Dual-In-Line Package
TL F 6500 – 1
Order Number 5410DMQB 5410FMQB DM5410J DM5410W or DM7410N
See NS Package Number J14A N14A or W14B
Function Table
Y e ABC
Inputs
Output
ABC
Y
XXL
XLX
LXX
HHH
H
H
H
L
H e High Logic Level
L e Low Logic Level
X e Either Low or High Logic Level
C1995 National Semiconductor Corporation TL F 6500
RRD-B30M105 Printed in U S A


National Semiconductor Electronic Components Datasheet

7410 Datasheet

Triple 3 Input NAND Gates

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7410 pdf
Absolute Maximum Ratings (Note)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
7V
Input Voltage
5 5V
Operating Free Air Temperature Range
DM54 and 54
b55 C to a125 C
DM74
0 C to a70 C
Storage Temperature Range
b65 C to a150 C
Note The ‘‘Absolute Maximum Ratings’’ are those values
beyond which the safety of the device cannot be guaran-
teed The device should not be operated at these limits The
parametric values defined in the ‘‘Electrical Characteristics’’
table are not guaranteed at the absolute maximum ratings
The ‘‘Recommended Operating Conditions’’ table will define
the conditions for actual device operation
Recommended Operating Conditions
Symbol
VCC
VIH
VIL
IOH
IOL
TA
Parameter
Supply Voltage
High Level Input Voltage
Low Level Input Voltage
High Level Output Current
Low Level Output Current
Free Air Operating Temperature
Min
45
2
b55
DM5410
Nom
5
Max
55
08
b0 4
16
125
Min
4 75
2
0
DM7410
Nom
5
Max
5 25
08
b0 4
16
70
Units
V
V
V
mA
mA
C
Electrical Characteristics over recommended operating free air temperature range (unless otherwise noted)
Symbol
VI
VOH
VOL
II
IIH
IIL
IOS
ICCH
ICCL
Parameter
Input Clamp Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Current Max
Input Voltage
High Level Input Current
Low Level Input Current
Short Circuit
Output Current
Supply Current with
Outputs High
Supply Current with
Outputs Low
Conditions
VCC e Min II e b12 mA
VCC e Min IOH e Max
VIL e Max
VCC e Min IOL e Max
VIH e Min
VCC e Max VI e 5 5V
VCC e Max VI e 2 4V
VCC e Max VI e 0 4V
VCC e Max
(Note 2)
DM54
DM74
VCC e Max
VCC e Max
Min
24
b20
b18
Typ
(Note 1)
34
02
3
9
Max
b1 5
04
1
40
b1 6
b55
b55
6
16 5
Units
V
V
V
mA
mA
mA
mA
mA
mA
Switching Characteristics at VCC e 5V and TA e 25 C (See Section 1 for Test Waveforms and Output Load)
Symbol
Parameter
Conditions Min Max Units
tPLH
Propagation Delay Time
Low to High Level Output
tPHL
Propagation Delay Time
High to Low Level Output
Note 1 All typicals are at VCC e 5V TA e 25 C
Note 2 Not more than one output should be shorted at a time
CL e 15 pF
RL e 400X
22 ns
15 ns
2


Part Number 7410
Description Triple 3 Input NAND Gates
Maker National Semiconductor
Total Page 4 Pages
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