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NXP Semiconductors Electronic Components Datasheet

BLW97 Datasheet

HF power transistor

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BLW97 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW97
HF power transistor
Product specification
August 1986


NXP Semiconductors Electronic Components Datasheet

BLW97 Datasheet

HF power transistor

No Preview Available !

BLW97 pdf
Philips Semiconductors
HF power transistor
Product specification
BLW97
DESCRIPTION
N-P-N silicon planar epitaxial
transistor designed for use in class-A,
AB and B operated high-power
industrial and military transmitting
equipment in the h.f. band.
The transistor offers excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is made to withstand
severe load-mismatch conditions. All
leads are isolated from the flange.
The transistors are supplied in
matched hFE groups.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
VCE
V
s.s.b.
(class-AB)
28
PIN CONFIGURATION
handbook, halfpage 4
IC(ZS)
A
0,1
f
MHz
PL
W
1,6 28 175 (PEP)
Gp
dB
> 11,5
ηdt
%
> 40
d3
dB
< −30
d5
dB
< −30
PINNING - SOT121B.
PIN DESCRIPTION
3 1 collector
2 emitter
3 base
4 emitter
12
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2


Part Number BLW97
Description HF power transistor
Maker NXP
Total Page 11 Pages
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