HF/VHF power transistor
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions. Transistors are supplied
in matched hFE groups.
The transistor has a 1⁄2" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
Gp η d3 d5
dB % dB dB
50 1,6 − 28 25 − 200 (P.E.P.) > 13,5 > 40(1) < −30 < −30
typ. 6,5 typ. 67
50 (P.E.P.) typ. 19
− typ. −40 < −40
1. ηdt at 200 W P.E.P.
handbook, halfpage 4
PINNING - SOT121B.
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.