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Intersil Electronic Components Datasheet

RFP2N15 Datasheet

2A/ 120V and 150V/ 1.750 Ohm/ N-Channel Power MOSFETs

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RFP2N15 pdf
Semiconductor
September 1998
RFP2N12,
RFP2N15
2A, 120V and 150V, 1.750 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFP2N
12,
RFP2N1
5)
/Subject
(2A,
120V
and
150V,
1.75
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 2A, 120V and 150V
• rDS(ON) = 1.750
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N12
TO-220AB
RFP2N12
RFP2N15
TO-220AB
RFP2N15
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09196.
Symbol
D
G
S
Packaging
JEDEL TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
[ /Page-
Mode
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2882.1


Intersil Electronic Components Datasheet

RFP2N15 Datasheet

2A/ 120V and 150V/ 1.750 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP2N15 pdf
RFP2N12, RFP2N15
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP2N12
RFP2N15
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
120
120
2
5
±20
25
0.2
-55 to 150
300
260
150
150
2
5
±20
25
0.2
-55 to 150
300
260
V
V
A
A
V
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFP2N12
BVDSS ID = 250µA, VGS = 0V
120 - - V
RFP2N15
150 - - V
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS , VGS = 0V
V0VD,ST=C0=.81x25RoaCted BVDSS, VGS =
VGS = ±20V, VDS = 0V
ID = 2A, VGS = 10V(Figures 6, 7)
ID = 2A, VGS = 10V
ID 1A, VDD = 75V, RG = 50,
RL = 73, VGS = 10V
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V
f = 1MHz, (Figure 9)
2
-
-
-
-
-
-
-
-
-
-
-
-
-
- 4V
- 1 µA
- 25 µA
- ±100 nA
-
1.750
- 3.5 V
17 25 ns
30 45 ns
30 45 ns
17 25 ns
- 200 pF
- 80 pF
- 25 pF
- 5 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = -1A
Diode Reverse Recovery Time
trr ISD = 2A, dlSD/dt = 50A/µs
NOTES:
2. Pulsed test: Pulse width 300µs duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 150 -
ns
5-2


Part Number RFP2N15
Description 2A/ 120V and 150V/ 1.750 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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