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Intersil Electronic Components Datasheet

RFP2N10 Datasheet

2A/ 80V and 100V/ 1.05 Ohm/ N-Channel Power MOSFETs

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RFP2N10 pdf
Semiconductor
July 1998
Features
• 2A, 80V and 100V
• rDS(ON) 1.05
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N08
TO-220AB
RFP2N08
RFP2N10
TO-220AB
RFP2N10
NOTE: When ordering, use entire part number.
RFP2N08,
RFP2N10
2A, 80V and 100V, 1.05 Ohm,
N-Channel Power MOSFETs
Description
These are N-channel enhancement mode silicon gate power
field effect transistors designed for applications such as
switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09282.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2883.1


Intersil Electronic Components Datasheet

RFP2N10 Datasheet

2A/ 80V and 100V/ 1.05 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP2N10 pdf
RFP2N08, RFP2N10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP2N08
RFP2N10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
80
80
2
5
±20
25
0.2
-55 to 150
300
260
100
100
2
5
±20
25
0.2
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
RFP2N10
BVDSS ID = 250µA, VGS = 0
100
RFP2N08
80
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA (Figure 8)
VDS = Rated BVDSS, TC = 25oC
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±20V, VDS = 0
ID = 2A, VGS = 10V (Figures 6, 7)
ID = 2A, VGS = 10V
ID 1A, VDD = 50V, RG = 50,
RL = 25, VGS = 10V
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f =1MHz
(Figure 9)
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Source to Drain Diode Specifications
TYP MAX UNITS
- -V
- -V
- 4V
- 1 µA
- 25 µA
- ±100 nA
- 1.05
- 2.1 V
17 25 ns
30 45 ns
30 45 ns
17 25 ns
- 200 pF
- 80 pF
- 25 pF
- 5 oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Diode Reverse Recovery Time
trr ISD = 2A, dISD/dt = 50A/µs
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
- 1.4 V
- 100 -
ns
5-2


Part Number RFP2N10
Description 2A/ 80V and 100V/ 1.05 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 4 Pages
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