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Intersil Electronic Components Datasheet

RFP25N05L Datasheet

25A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFET

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RFP25N05L pdf
Data Sheet
RFP25N05L
July 1999 File Number 2270.3
25A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP25N05L is an N-Channel logic level power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. The RFP25N05L was
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, switching regulators, switching converters, motor
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N05L
TO-220AB
RFP25N05L
NOTE: When ordering, include the entire part number.
Features
• 25A, 50V
• rDS(ON) = 0.047
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-243
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP25N05L Datasheet

25A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFET

No Preview Available !

RFP25N05L pdf
RFP25N05L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP25N05L
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Energy Rating (See Figures 4, 15, and 16). . . . . . . . . . . . . . . . . . . . . .
50
50
25
65
Refer to UIS SOA Curve
V
V
A
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
0.48
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IGSS
IDSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
Qg(TOT)
Qg(5)
Qg(TH)
RθJC
RθJA
VGS = 0V, ID = 250µA (Figure 10)
VGS = VDS, ID = 250µA (Figure 9)
VGS = ±10V, VDS = 0V
VDS = 40V, VGS = 0V
TC = 150oC
VGS = 5V, ID = 25A (Figures 7, 8)
VGS = 4V, ID = 25A
VDD = 25V, ID =12.5A
RL = 2Ω, RGS = 5
(Figures 15, 16)
VGS = 0 - 10V
VGS = 0 - 5V
VGS = 0 - 1V
VDD = 40V, ID = 25A,
RL = 1.6
(Figures 17, 18)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 25A
Diode Reverse Recovery Time
trr ISD = 25A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse width 80µs, duty cycle 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature.
MIN TYP MAX UNITS
50 -
-
V
1.0 - 2.0
V
- - ±100 nA
- - 1.0 µA
- - 50 µA
- - 0.047
- - 0.056
- - 60 ns
- 15 -
ns
- 35 -
ns
- 40 -
ns
- 14 -
ns
- - 100 ns
- - 80 nC
- - 45 nC
- - 3.0 nC
- - 2.083 oC/W
- - 80 oC/W
MIN TYP MAX UNITS
- - 1.5 V
- - 125 ns
6-244


Part Number RFP25N05L
Description 25A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 6 Pages
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