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Intersil Electronic Components Datasheet

RFP25N05 Datasheet

25A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFET

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RFP25N05 pdf
Data Sheet
RFP25N05
July 1999 File Number 2112.4
25A, 50V, 0.047 Ohm, N-Channel Power
MOSFET
The RFP25N05 N-channel power MOSFET is manufactured
using the MegaFET process. This process which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. This transistor can be operated directly
from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N05
TO-220AB
RFP25N05
NOTE: When ordering use the entire part number.
Features
• 25A, 50V
• rDS(ON) = 0.047
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-504
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP25N05 Datasheet

25A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFET

No Preview Available !

RFP25N05 pdf
RFP25N05
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP25N05
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
50
50
±20
25
Refer to Peak Current Curve
Refer to UIS Curve
72
0.48
-55 to 175
300
260
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
QG(TOT)
QG(10)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250mA (Figure 10)
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS,TC = 150oC
VGS = ±20V
ID = 25A, VGS = 10V (Figure 9)
VDD = 25V, ID 12.5A, RL = 2.0,
VGS = 10V, RG = 10
(Figure 13)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V,
ID = 25A, RL = 1.6
Ig(REF) = 0.75mA
(Figure 13)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
(Figure 3)
50
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14
30
45
22
-
-
-
-
1075
350
100
-
-
-
4
1
25
±100
0.047
60
-
-
-
-
100
80
45
3
-
-
-
2.083
80
V
V
µA
µA
nA
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 25A
- - 1.5 V
Reverse Recovery Time
tRR ISD = 25A, dISD/dt = 100A/µs
- - 125 ns
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-505


Part Number RFP25N05
Description 25A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 8 Pages
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