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Intersil Electronic Components Datasheet

RFP12N10L Datasheet

12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET

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RFP12N10L pdf
Data Sheet
RFP12N10L
July 1999 File Number 1512.3
12A, 100V, 0.200 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09526.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12N10L
TO-220AB
F12N10L
NOTE: When ordering, include the entire part number.
Features
• 12A, 100V
• rDS(ON) = 0.200
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
D
Packaging
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
6-224
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP12N10L Datasheet

12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET

No Preview Available !

RFP12N10L pdf
RFP12N10L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP12N10L
100
100
12
30
10
60
0.48
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance Junction to Case
BVDSS ID = 250mA, VGS = 0V
100 - - V
VGS(TH) VGS = VDS, ID = 250mA (Figure 7)
1-2 V
IDSS
VDS = 65V, VDS = 80V
VDS = 65V, VDS = 80V
TC = 125oC
-
-
- 1 µA
- 50 µA
IGSS
VGS = 10V, VDS = 0V
- - 100 µA
rDS(ON) ID = 12A, VGS = 5V (Figures 5, 6)
- - 0.2
CISS
COSS
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 8)
- - 900 pF
- - 325 pF
CRSS
- - 170 pF
td(ON)
tr
ID = 6A, VDD = 50V, RG = 6.25,
VGS = 5V
(Figures 9, 10, 11)
- 15 50 ns
-
70 150
ns
td(OFF)
- 100 130 ns
tf
-
80 150
ns
RθJC
RFP12N10L
2.083 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 6A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 50A/µs
NOTES:
2. Pulsed: pulse duration = 80µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 150 -
ns
6-225


Part Number RFP12N10L
Description 12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 5 Pages
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