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Intersil Electronic Components Datasheet

RFP12N10 Datasheet

12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs

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RFP12N10 pdf
Semiconductor
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Data Sheet
October 1998 File Number 1386.2
12A, 80V and 100V, 0.200 Ohm, N-Channel
Power MOSFETs
[ /Title
(RFM12 These are N-Channel enhancement mode silicon gate
N08,
RFM12
N10,
RFP12
N08,
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
RFP12 Formerly developmental type TA09594.
N10)
/Sub- Ordering Information
ject
(12A,
PART NUMBER
PACKAGE
BRAND
80V and
100V,
0.2
RFM12N08
RFM12N10
TO-204AA
TO-204AA
RFM12N08
RFM12N10
Ohm,
RFP12N08
TO-220AB
RFP12N08
N-Chan- RFP12N10
TO-220AB
RFP12N10
nel
Power
NOTE: When ordering, use the entire part number.
MOS-
FETs) Packaging
/Author
()
JEDEC TO-204AA
/Key-
words
DRAIN
(FLANGE)
(Harris
Semi-
conduc-
tor, N-
Chan-
nel
GATE (PIN 1)
SOURCE (PIN 2)
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Cre-
Features
• 12A, 80V and 100V
• rDS(ON) = 0.200
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998


Intersil Electronic Components Datasheet

RFP12N10 Datasheet

12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP12N10 pdf
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM12N08 RFM12N10 RFP12N08 RFP12N10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
80
80
12
30
±20
75
0.6
-55 to 150
300
260
100
100
12
30
±20
75
0.6
-55 to 150
300
260
80
80
12
30
±20
60
0.48
-55 to 150
300
260
100
100
12
30
±20
60
0.48
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFM12N08, RFP12N08
BVDSS ID = 250µA, VGS = 0V
RFM12N10, EFP12N10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA (Figure 8)
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±20V, VDS = 0V
ID = 12A, VGS = 10V (Figures 6, 7)
ID = 12A, VGS = 10V
VDD = 50V, ID = 6A, RG = 50Ω,
VGS = 10V, RL = 8Ω,
(Figures 10, 11, 12)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 9)
RFM12N08, RFM12N10
RFP12N08, RFP12N10
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Voltage (Note 2)
VSD
ISD = 6A
Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTE:
2. Pulse test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN
80
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP MAX UNITS
- -V
- -V
- 4V
- 1 µA
- 25 µA
-
±100
nA
-
0.200
- 2.4 V
45 70 ns
250 375 ns
85 130 ns
100 150 ns
- 850 pF
- 300 pF
- 150 pF
- 1.67 oC/W
- 2.083 oC/W
TYP MAX UNITS
- 1.4 V
150 -
ns
2


Part Number RFP12N10
Description 12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
PDF Download
RFP12N10 pdf
RFP12N10 Datasheet PDF
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