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Hitachi Power Semiconductor Device Electronic Components Datasheet

D1490 Datasheet

2SD1490

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D1490 pdf
2SD1490
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB1059
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base


Hitachi Power Semiconductor Device Electronic Components Datasheet

D1490 Datasheet

2SD1490

No Preview Available !

D1490 pdf
2SD1490
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
70
50
6
1
0.75
150
–55 to +150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
voltage
V(BR)CBO
70
Collector to emitter breakdown V(BR)CEO
voltage
50
Emitter to base breakdown
voltage
V(BR)EBO
6
Collector cutoff current
ICBO — —
Emitter cutoff current
IEBO — —
DC current transfer ratio
hFE*1
100 —
Collector to emitter saturation VCE(sat)
voltage
Gain bandwidth product
fT
— 80
Collector output capacitance Cob — 20
Note: 1. The 2SD1490 is grouped by hFE as follows.
B CD
100 to 200 160 to 320 250 to 500
Max Unit Test conditions
—V
IC = 10 µA, IE = 0
—V
IC = 1 mA, RBE =
—V
IE = 10 µA, IC = 0
1 µA
0.2 µA
500
0.3 V
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
VCE = 2 V, IC = 0.1 A
IC = 1 A, IB = 0.1 A
— MHz VCE = 2 V, IC = 10 mA
— pF VCB = 10 V, IE = 0, f = 1 MHz
See characteristic curves of 2SD789.
2


Part Number D1490
Description 2SD1490
Maker Hitachi Semiconductor
Total Page 4 Pages
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