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Panasonic Electronic Components Datasheet

D1499 Datasheet

2SD1499

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D1499 pdf
Power Transistors
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
s Features
q Extremely satisfactory linearity of the forward current transfer
ratio hFE
q Wide area of safe operation (ASO)
q High transition frequency fT
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
100
100
5
8
5
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = 100V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, f = 1MHz
*hFE2 Rank classification
Rank
Q
P
hFE2 60 to 120 100 to 200
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
13 2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
50 µA
50 µA
20
60 200
20
1.8 V
2.0 V
20 MHz
90 pF
1
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Panasonic Electronic Components Datasheet

D1499 Datasheet

2SD1499

No Preview Available !

D1499 pdf
Power Transistors
80
70
60
50
(1)
40
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
10
TC=25˚C
8
IB=100mA
6
80mA
60mA
4
40mA
2 20mA
10mA
0
0 26 4
8 10 12
Collector to emitter voltage VCE (V)
2SD1499
IC — VBE
8
VCE=5V
7
25˚C
6
TC=100˚C –25˚C
5
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
25˚C
0.3
TC=100˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
300
100
30
10
hFE — IC
TC=100˚C
25˚C
–25˚C
VCE=5V
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=5V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
1
0.3
10ms
DC
t=1ms
0.1
Rth(t) — t
102 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
10
1
10–1
(1)
(2)
0.03
0.01
1 3 10 30 100 300 1000
10–2
10–3
10–2
10–1
1
10 102 103 104
Collector to emitter voltage VCE (V)
Time t (s)
2


Part Number D1499
Description 2SD1499
Maker Panasonic Semiconductor
Total Page 2 Pages
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