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General Semiconductor
General Semiconductor

70N03 Datasheet Preview

70N03 Datasheet

N-channel Enhancement-mode MOSFET

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70N03 pdf
GFB70N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
VDS 30V RDS(ON) 8mID 70A
D
TO-263AB
G
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
www.DataS0h.3e20e(t84.1U3).com
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain Current(1)
VGS
± 20
ID 70
Pulsed Drain Current
IDM 200
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
62.5
25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
2.0
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/16/01



General Semiconductor
General Semiconductor

70N03 Datasheet Preview

70N03 Datasheet

N-channel Enhancement-mode MOSFET

No Preview Available !

70N03 pdf
GFB70N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
On-State Drain Current(1)
IDSS
ID(on)
VDS = 30V, VGS = 0V
VDS 5V, VGS = 10V
www.DataSDhreaient-4SoUu.rccoemOn-State Resistance(1)
Forward Transconductance(1)
RDS(on)
gfs
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 30A
VDS = 15V, ID = 35A
Dynamic
Total Gate Charge
VDS=15V, VGS=5V, ID=35A
Qg
Gate-Source Charge
Gate-Drain Charge
VDS = 15V, VGS = 10V
Qgs ID = 35A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr VDD = 15V, RL = 15
Turn-Off Delay Time
td(off)
ID 1A, VGEN = 10V
Fall Time
tf RG = 6
Input Capacitance
Ciss VGS = 0V
Output Capacitance
Coss
VDS = 15V
Reverse Transfer Capacitance
Crss f = 1.0MHZ
Source-Drain Diode
Max Diode Forward Current
Diode Forward Voltage(1)
IS
VSD IS = 35A, VGS = 0V
Note: (1) Pulse test; pulse width 300 µs, duty cycle 2%
Min
30
1.0
70
Typ Max
——
3.0
±100
1
——
68
9 11
61
34
63
11
11
9
9
100
31
3400
618
300
48
95
14
14
167
62
35
0.9 1.3
Unit
V
V
nA
µA
A
m
S
nC
ns
pF
A
V
Switching
Test Circuit
VIN
VGEN
RG
G
VDD
RD
D
VOUT
DUT
S
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH


Part Number 70N03
Description N-channel Enhancement-mode MOSFET
Maker General Semiconductor
Total Page 5 Pages
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