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70N03 Datasheet Preview

70N03 Datasheet

N-Channel MOSFET

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70N03 pdf
70N03
N-Channel MOSFET
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 +0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source G
D
S
Features
VDS (V) = 30V
ID = 33A (VGS = 10V)
RDS(ON) 4.3mΩ (VGS = 10V)
RDS(ON) 6.5mΩ (VGS = 4.5V)
T
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current (Note.1)
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Ta=25
Tc=70
Tc=25
Ta=70
t 10 sec
Steady State
Note.1: Surface Mounted on FR4 Board, t 10 sec.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ
Tstg
Rating
30
±20
33
70
100
88
8.3
18
50
1.5
150
-55 to 150
Unit
V
A
W
/W




CANYU
CANYU

70N03 Datasheet Preview

70N03 Datasheet

N-Channel MOSFET

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70N03 pdf
70N03
N-Channel MOSFET
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Pulsed Current
Diode Forward Voltage
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
IS
ISM
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=30V, VGS=0V
VDS=30V, VGS=0V, TJ=125
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=20A
VGS=10V, ID=20A TJ=125
VGS=4.5V, ID=20A
VGS=10V, VDS=5V
VDS=15V, ID=20A
VGS=0V, VDS=25V, f=1MHz (Note.1)
VGS=0V, VDS=0V, f=1MHz (Note.1)
VGS=10V, VDS=15V, ID=50A (Note.1)
VGS=10V, VDS=15V, RL=0.3Ω,
RG=2.5Ω,ID=50A (Note.1)
IF= 50A, dI/dt= 100A/μs
IS=100A,VGS=0V
Note.1: Pulse test; pulse width 300us, duty cycle 2%.
Min Typ Max Unit
30 V
1
μA
50
±100 nA
1 3V
3.5 4.3
7 mΩ
5.1 6.5
50 A
20 S
5100
860 pF
430
0.5 1 1.5 Ω
90 135
18 nC
16
12 20
12 20
40 60 ns
10 15
40 80
8.3
A
100
1.2 1.5 V




CANYU
CANYU

70N03 Datasheet Preview

70N03 Datasheet

N-Channel MOSFET

No Preview Available !

70N03 pdf
70N03
N-Channel MOSFET
Typical Characterisitics
Output Characteristics
200
V GS = 10 thru 5 V
160
120 4 V
80
40
0
0
180
150
120
90
60
30
0
0
8000
3V
2468
VDS Drain-to-Source Voltage (V)
Transconductance
T C = 55 C
25 C
125 C
10
20 40 60 80
ID Drain Current (A)
Capacitance
100
6000
4000
C iss
2000
C rss
C oss
0
0 6 12 18 24
VDS Drain-to-Source Voltage (V)
30
Transfer Characteristics
200
150
100
50
0
0
0.010
T C = 125 C
25 C
55 C
12345
VGS Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
0.008
0.006
0.004
V GS = 4.5 V
V GS = 10 V
0.002
0.000
0
10
20 40 60 80
ID Drain Current (A)
Gate Charge
100
8
VDS = 15 V
ID = 50 A
6
4
2
0
0 20 40 60 80 100
Qg Total Gate Charge (nC)




Part Number 70N03
Description N-Channel MOSFET
Maker CANYU
Total Page 5 Pages
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