U308 Datasheet | Specifications & PDF Download

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CED3080/CEU3080 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS =

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InterFET Product Folder Technical Support Order Now U308-9 U308, U309 N-Channel JFET Features • InterFET N0072L Geometry • Low Noise: 2 nV/√Hz T

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www.DataSheet4U.com LUM-115HMU308 LED displays 24×48 dot matrix unit LUM-115HMU308 The LUM-115HMU308 is a 24×48 dot matrix display which can be used

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a U308-10 N-Channel JFETs General Description The U308 thru U310 series of N-channel JFETs is VHF designed for amplifier, oscillator and mixer ap

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CEU3089 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V , 25A , RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ

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N-Channel JFET High Frequency Amplifier CORPORATION U308 – U310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain o

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Datasheet Built in VCXO, Spread-Spectrum Clock Generator BU3087FV ●Description BU3087FV has built in VCXO that is necessary for the Digital-TV sign

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www.DataSheet4U.com LUM-512HMU308 LED displays 16×32 dot matrix unit LUM-512HMU308 The LUM-512HMU308 is a 16×32 dot matrix display which can be used

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N-Channel JFET High Frequency Amplifier CORPORATION U308 – U310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain o

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RU3080M N-Channel Advanced Power MOSFET Features • 30V/80A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design

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n-channel JFETs designed for • • • H Performance Curves NZA See Section 4 • VHF Amplifiers • Front End High Sensitivity Amplifiers • Oscillators • M

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RU3081L N-Channel Advanced Power MOSFET MOSFET Features • 30V/90A, RDS (ON) =2.6 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense

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