U308 Datasheet | Pinout, Features, Price Comparison & PDF

N-Channel JFET High Frequency Amplifier CORPORATION U308 – U310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain o

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InterFET Product Folder Technical Support Order Now U308-9 U308, U309 N-Channel JFET Features • InterFET N0072L Geometry • Low Noise: 2 nV/√Hz T

Datasheet Built in VCXO, Spread-Spectrum Clock Generator BU3087FV ●Description BU3087FV has built in VCXO that is necessary for the Digital-TV sign

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www.DataSheet4U.com LUM-115HMU308 LED displays 24×48 dot matrix unit LUM-115HMU308 The LUM-115HMU308 is a 24×48 dot matrix display which can be used

RU3081L N-Channel Advanced Power MOSFET MOSFET Features • 30V/90A, RDS (ON) =2.6 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense

U308 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U308 The U308 is a high frequency n-channel JFET offering a wide range and low noi

U308 U309 U310 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Gate Current Total Device Dissipation (& T/\ = 25°C Derate above 25°C

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LSU308 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U308 The LSU308 is a high frequency n-channel JFET offering a wide range and low

RU3089L N-Channel Advanced Power MOSFET MOSFET Features • 30V/89A, RDS (ON) =3.8mΩ (Typ.)@VGS=10V RDS (ON) =5mΩ (Typ.)@VGS=4.5V • Super High Dense Ce

CEU3089 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V , 25A , RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ

n-channel JFETs designed for • • • H Performance Curves NZA See Section 4 • VHF Amplifiers • Front End High Sensitivity Amplifiers • Oscillators • M

HVU308A Variable Capacitance Diode for TV tuner ADE-208-020B (Z) Rev 2 Nov. 1998 Features • Low series resistance. (rs=0.95Ωmax) • Ultra small R esin

RU3080M N-Channel Advanced Power MOSFET Features • 30V/80A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design

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