Toshiba Semiconductor 2SB Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation volta

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier 2SB1640 Unit: mm • Low saturation voltage: VCE (sat) = −

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applications Unit: mm • Low saturation

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: SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. 10.3MAX. Unit in mm FEATURES . Low Collector Saturati

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm • H

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB905 2SB905 Power Amplifier Applications • Complementary to SD1220 Absolute Maximum

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation volta

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low

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