B1015A Datasheet - Toshiba Semiconductor

B1015A 2SB1015A

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications Low collector saturation voltage: VCE (sat) = 1.7 V (max) (IC = 3 A, IB = 0.3 A) Collector power dissipation: PC = 25 W (Tc = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction.

B1015A-ToshibaSemiconductor.pdf