N-CHANNEL 60V - 0.015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.018 W ID 50 A TYPICAL RDS(on) = 0.01

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS

430V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.39 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  F

TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary Description The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off d

STP15810 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220

STB141NF55 - STB141NF55-1 STP141NF55 N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET Features Type STB141NF55 STB141N

800V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=1.0 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fa

TP1241L1/ TP1242L1 36V, 1-MHz, 0.7-V/μs Op Amps Features ⚫ Supply Voltage: 4.5V to 36V ⚫ Offset Voltage: ±300μV Maximum ⚫ Differential Input Voltage

FTP10N40 N-Channel MOSFET Applications: • Ballast and Lighting • DC-AC Inverter Pb Lead Free Package and Finish RDS(ON) (Max.) 0.55 Ω ID 10A VDSS 40

www.DataSheet4U.com STP100NF04 STB100NF04 N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK STripFET™ II Power MOSFET General features Type STP100NF04

NOTE: The HantouchUSA Incoming Inspection Standard is part of this drawing. This quality and performance document can be viewed at: www.hantouchUSA.co

STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data T

SPTP10R020HA 100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=1.75mΩ@VGS=10V  Low Gate Charge Minimize Swit

FTP16N06A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • Uninterruptible Power Supply (UPS) Features: • RoHS Co

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

3PEAK TP1271/TP1272 /TP1274 36V Single Supply, Precision RRO Op-amps With 7MHz Bandwidth Features Description  Low Offset Voltage: 150μV Maximum

STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages TAB 2 3