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P11NK50Z - STP11NK50Z

Download the P11NK50Z datasheet PDF. This datasheet also covers the P11NK50ZFP variant, as both devices belong to the same stp11nk50z family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P11NK50ZFP_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by STMicroelectronics

Part Number Description
P11NK50ZFP STP11NK50ZFP
P11NB40FP STP11NB40FP
P11NM50N STP11NM50N
P11NM60 N-CHANNEL Power MOSFET
P11NM60FP STP11NM60FP
P11NM60N N-CHANNEL Power MOSFET
P11NM80 N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 1 D2PAK 3 2 1 TO-220FP Figure 1.