Datasheet4U Logo Datasheet4U.com

P11NM80 - N-CHANNEL Power MOSFET

General Description

The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance.

Key Features

  • Type VDSS RDS(on) RDS(on).
  • Qg STB11NM80 800V < 0.40Ω 14Ω.
  • nC STF11NM80 800V < 0.40Ω 14Ω.
  • nC STP11NM80 800V < 0.40Ω 14Ω.
  • nC STW11NM80 800V < 0.40Ω 14Ω.
  • nC ID 11A 11A 11A 11A.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Best RDS(on).
  • Qg in the industry.

📥 Download Datasheet

Other Datasheets by STMicroelectronics

Part Number Description
P11NM50N STP11NM50N
P11NM60 N-CHANNEL Power MOSFET
P11NM60FP STP11NM60FP
P11NM60N N-CHANNEL Power MOSFET
P11NB40FP STP11NB40FP
P11NK50Z STP11NK50Z
P11NK50ZFP STP11NK50ZFP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800V - 0.35Ω - 11A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET General features Type VDSS RDS(on) RDS(on)*Qg STB11NM80 800V < 0.40Ω 14Ω*nC STF11NM80 800V < 0.40Ω 14Ω*nC STP11NM80 800V < 0.40Ω 14Ω*nC STW11NM80 800V < 0.40Ω 14Ω*nC ID 11A 11A 11A 11A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on) *Qg in the industry Description The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.