·
5 Hits
· Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SC4601-applied equipment. -High de...
·
4 Hits
· Adoption of MBIT process. · High breakdown voltage and large current capacity.
Package Dimensions
unit:mm 2064A
[2SA1770/2SC4614]
2.5 1.45 6.9 1.0
...
·
4 Hits
· High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high
frequency characteristic:
Cre=1.2pF (NPN), 1.7pF (PNP). ...
·
3 Hits
· Adoption of FBET process.
· High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. · V...
·
2 Hits
· Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SC4602-applied equipment. -High de...
·
2 Hits
· High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=2.8pF). · Full isolation package. · High reliability (Adoption of HVP process).
Pa...
·
2 Hits
· High breakdown voltage (VCEO min=1200V). · Small Cob (typical Cob=2.0pF). · Full-isolation package. · High reliability (Adoption of HVP process).
P...
·
2 Hits
· High breakdown voltage (VCEO min=1500V). · Small Cob (typical Cob=1.5pF). · Full-isolation package. · High reliability (Adoption of HVP process).
P...
·
2 Hits
• Low noise figure : NF=1.5dB typ (f=0.9GHz). • High power gain : S2le2=8.0dB typ (f=0.9GHz). • High cutoff frequency : fT=4.5GHz typ.
Package Dime...
·
2 Hits
· Adoption of MBIT process. · High breakdown voltage, large current capacity. · Fast switching speed.
Package Dimensions
unit:mm 2064
[2SA1768/2SC461...
·
2 Hits
· Adoption of MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed.
Package Dimensions
unit:mm 2042A
[2SA1769/...
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