2SC4660 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4660
Manufacturer	Sanyo Semicon Device
File Size	92.68 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC4660_SanyoSemiconDevice.pdf

High fT (fT=2.2GHz typ).
Large current (IC=300mA).
Adoption of FBET process. Package Dimensions unit:mm 2042B [2SC4660] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 1.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature T.

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Published: Apr 3, 2005 |