Plastic Datasheet | Pinout, Features, Price Comparison & PDF

1N5817 THRU 1N5819 PLASTIC SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES DO-41 Low switching noise Low forw

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 Silicon Planar PNPN Thyristor TO-92 1. KATHODE FEATURES 2. GATE

www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF

HIGH-RELIABILITY PRODUCTS Features VR = 200V IR = 5.0µA trr = 150ns VF = 1.3V at IF = 1A 1N4942C 200V Axial Leaded Fast Switching Plastic Rectifier Q

SEP ELECTRONIC CORP. RL201 thru RL207 2.0 A Plastic Silicon Rectifier Rectifier Reverse Voltage 50 to 1000V DO-15 Features Diffused junction High cu

JXND ELECTRONICS CO.,LTD SOT-23 Plastic Encapsulate MOSFETS AO3400 30V N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V RDS(on)Typ

Hio H R www.DataSheet4U.com CL01-12(12kV/350mA) Outline Drawings High Voltage Plastic Diode Reverse Voltage 12kV Forward Current 350mA Features L

1N5059 - 1N5062 PLASTIC SILICON RECTIFIER DIODES VOLTAGE RANGE: 200 - 8 00V CURRENT: 2.0 A Features Low cost Diffused junction Glass passivated

Elektronische Bauelemente 2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f

SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS3400 (N-Channel Enhancement mode Field Effect Transistor) /MARKIN

2SC1815 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (NPN) MARKING: Equivalent Circuit: SOT-23 FEATURES: ※ Collector Current: Ic=150mA ※ Pow

P300A thru P300M GOOD-ARK Electronics 3A,50-1000V Standard Rectifiers Features ● Low leakage current ● Low forward voltage drop ● Glass passivated c

P300A thru P300M GOOD-ARK Electronics 3A,50-1000V Standard Rectifiers Features ● Low leakage current ● Low forward voltage drop ● Glass passivated c

www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF

1N4139---1N4146 PLASTIC SILICON RECTIFIERS VOLTAGE RANGE: 50 --- 1200 V CURRENT: 3.0 A FEATURES Low cost Diffused junction Low leakage Low forward vo

Technical Data Data Sheet N1646, Rev. A 1N4001FL THRU 1N4007FL General Purpose Plastic Rectifier 1N4001FL THRU 1N4007FL SOD-123FL Features  Low f

Elektronische Bauelemente KTA1023 -0.8A , -120V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead

P300A thru P300M GOOD-ARK Electronics 3A,50-1000V Standard Rectifiers Features ● Low leakage current ● Low forward voltage drop ● Glass passivated c

1N5059 - 1N5062 PLASTIC SILICON RECTIFIER DIODES VOLTAGE RANGE: 200 - 8 00V CURRENT: 2.0 A Features Low cost Diffused junction Glass passivated