ON Semiconductor NTB Datasheet | Specifications & PDF Download

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60

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www.DataSheet4U.com NTP18N06L, NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1 Features • Typ. RDS(on) = 20 mW @ VG

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Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG

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NTB5860NL, NTP5860NL, NVB5860NL N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested

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NTB082N65S3F Power MOSFET, N‐Channel, SUPERFET) III, FRFET), 650 V, 40 A, 82 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high v

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MOSFET - Power, Single N-Channel, D2PAK7 60 V, 2.1 mW, 211 A NTBGS002N06C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacita

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MOSFET - Power, N-Channel, SUPERFET) III, FAST 650 V, 95 mW, 30 A NTBL095N65S3H Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high v

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MOSFET - Power, Single N-Channel, TOLL 80 V, 0.79 mW, 457 A NTBLS0D8N08X Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Condu

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ. RDS(on) = 40

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NTP18N06, NTB18N06 Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK Designed for low voltage, high speed switching applications in power supplies,

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ul

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 7.3 mW, 101 A NTB7D3N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 7.3 mW at

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MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 49 A, 50 mW NTBL050N65S3H Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high v

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MOSFET - Power, Single N-Channel, D2PAK7 60 V, 1.55 mW, 267 A NTBGS1D5N06C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacit

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VG

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Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 m

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Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TOLL NTBL045N065SC1 Features • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @

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NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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