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NTBG028N170M1 - SiC MOSFET

ON Semiconductor

The NTBG028N170M1 by ON Semiconductor is a SiC MOSFET. Below is the official datasheet preview.

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NTBG028N170M1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Official preview page of the NTBG028N170M1 SiC MOSFET datasheet (ON Semiconductor).

Datasheet Details

Part number	NTBG028N170M1
Manufacturer	ON Semiconductor
File Size	294.44 KB
Description	SiC MOSFET
Datasheet	NTBG028N170M1-ONSemiconductor.pdf
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NTBG028N170M1 Product details

Features

Typ. RDS(on) = 28 mW.
Ultra Low Gate Charge (typ. QG(tot) = 222 nC).
Low Effective Output Capacitance (typ. Coss = 200 pF).
100% Avalanche Tested.
RoHS Compliant Typical.

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Published: Jun 1, 2024 |