Datasheet4U Logo Datasheet4U.com

NTB082N65S3F - N-Channel MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – NTB082N65S3F

Datasheet Details

Part number NTB082N65S3F
Manufacturer INCHANGE
File Size 228.89 KB
Description N-Channel MOSFET
Datasheet download datasheet NTB082N65S3F Datasheet
Additional preview pages of the NTB082N65S3F datasheet.

Product details

Description

Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V Drain Source Voltage: VDSS= 650V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Industrial power supplies UPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 40 A IDM Pulse Drain Current 100 A PD T

📁 Similar Datasheet

  • NTB082N65S3F - Power MOSFET (ON Semiconductor)
  • NTB0101 - Dual supply translating transceiver (NXP)
  • NTB0101A - Auto direction sensing dual supply (NXP)
  • NTB0102 - Dual supply translating transceiver (NXP)
  • NTB0102-Q100 - Dual supply translating transceiver (NXP)
  • NTB0104 - Dual supply translating transceiver (NXP)
  • NTB0104-Q100 - Dual supply translating transceiver (NXP)
  • NTB011N15MC - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by INCHANGE
    Published: |