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5 Hits
The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral vo...
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4 Hits
General Description
• –5.3 A, –30 V
RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON) = 80 mΩ @ VGS = –4.5 V
This P-Channel MOSFET is a rugged gate version of...
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4 Hits
• 12.4 A, 40 V RDS(ON) = 12 mΩ @ VGS = 4.5 V RDS(ON) = 10 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power ...
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4 Hits
• 12.4 A, 40 V RDS(ON) = 11 mΩ @ VGS = 4.5 V RDS(ON) = 9 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power a...
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4 Hits
General Description
Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A High performance trench technol...
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