Motorola 2N2 Datasheet | Pinout, Features, Price Comparison & PDF

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2222A/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2222A M

2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS . . . widely used Industry Standard tra

w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c

2N2224 (SILICON) NPN silicon annular transistor designed primarily for high speed switching applications. CASE 31 (TO·S) Collector connected to case

2N2137 thru 2N2146 (GERMANIUM) 2N2137A thru 2N2146A PNP germanium industrial power transistors for driver applications in high reliability equipment.

2N2137 thru 2N2146 (GERMANIUM) 2N2137A thru 2N2146A PNP germanium industrial power transistors for driver applications in high reliability equipment.

w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c

2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS . . . widely used Industry Standard tra

MAXIMUM RATINGS Rating 2N2060,A Symbol 2N2223,A 2N2480 2N2480A Collector-Emitter Voltage Collector-Emitter Voltage VCEO 60 40 40 VCER 80 —

2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS . . . widely used Industry Standard tra

2N2137 thru 2N2146 (GERMANIUM) 2N2137A thru 2N2146A PNP germanium industrial power transistors for driver applications in high reliability equipment.

A 2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current swi

2N2303 (SILICON) For Specifications, See 2N722 Data. 2N2322 thru 2N2326 {SILICON} All-diffused PNPN thyristors designed for gating operation in rnAI

2N2303 (SILICON) For Specifications, See 2N722 Data. 2N2322 thru 2N2326 {SILICON} All-diffused PNPN thyristors designed for gating operation in rnAI

2N2137 thru 2N2146 (continued) INPUT & TRANSFER CHARACTERISTICS BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT All Types 1.2 VeE:::: 2V 1.0 ~ o 2: 0

2N2137 thru 2N2146 (continued) INPUT & TRANSFER CHARACTERISTICS BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT All Types 1.2 VeE:::: 2V 1.0 ~ o 2: 0

2N2137 thru 2N2146 (continued) INPUT & TRANSFER CHARACTERISTICS BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT All Types 1.2 VeE:::: 2V 1.0 ~ o 2: 0

A 2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current swi

2N2137 thru 2N2146 (continued) INPUT & TRANSFER CHARACTERISTICS BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT All Types 1.2 VeE:::: 2V 1.0 ~ o 2: 0

2N2137 thru 2N2146 (GERMANIUM) 2N2137A thru 2N2146A PNP germanium industrial power transistors for driver applications in high reliability equipment.