P2N2222A
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by P2N2222A/D
Amplifier Transistors
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12
- 55 to +150 Unit Vdc Vdc Vdc m Adc m W m W/°C Watts m W/°C °C
1 2 3
CASE 29- 04, STYLE 17 TO- 92 (TO- 226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage (IC = 10 m Adc, IB = 0) Collector
- Base Breakdown Voltage (IC =...
