LGE Datasheet | Specifications & PDF Download

2SD400 TO-92MOD Transistor (NPN) 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE Features — Low-Frequency power Amp, Electronic Governor Applications TO

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78L05 Three-terminal positive voltage regulator 1 2 3 Features — Maximum Output current IO: 0.1 A — Output voltage VO: 5 V — Continuous total dissipa

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W005-W10 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak

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BYG21K-BYG21M Surface Mount Fast Recovery Rectifiers Features Glass passivated junction chip For surface mounted application Low profile package Buil

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

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W005-W10 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak

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W005-W10 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak

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LL4150 Fast Switching Surface Mount Diode MINI MELF Features Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductanc

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1N5711W 1N5711WS 1N5711L Small Signal Schottky Barrier Diode Features  Low forward voltage drop  Fast switching speed  Low capacitance  Guard rin

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Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak RBV

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BYG21K-BYG21M Surface Mount Fast Recovery Rectifiers Features Glass passivated junction chip For surface mounted application Low profile package Buil

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

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Features Glass Passivated Die Construction 3000W Peak Pulse Power Dissipation 5.0V – 170V Standoff Voltage Uni- and Bi-Directional Versions Av

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BT137-600E Sensitive Gate Triacs Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirection

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

(10 views)

BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

(10 views)

1N5711W 1N5711WS 1N5711L Small Signal Schottky Barrier Diode Features  Low forward voltage drop  Fast switching speed  Low capacitance  Guard rin

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30KP33S,SC SERIES 30K Watts TVS Diodes VR : 33 - 400 Volts PPK : 30,000 Watts Features — — — — — Glass passivated junction chip Excellent Clamping Ca

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3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 — power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ u

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