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10N65 - N-Channel MOSFET

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LGE

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10N65 N-Channel MOSFET by LGE - Datasheet Preview — Datasheet preview – 10N65

Datasheet Details

Part number	10N65
Manufacturer	LGE
File Size	547.32 KB
Description	N-Channel MOSFET
Datasheet	10N65 Datasheet
Additional preview pages of the 10N65 datasheet.

Product details

Description

ShenZhen LuGuang Electronic Technology.

Features

10A, 650V, RDS(on)=0.63Ω @VGS=10 V.
Low gate charge ( typical 45 nC).
Low Crss ( typical 12pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mo.

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Published: Jul 28, 2020 |