KSB Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor KSB1015 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Comp

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KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 1 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Sil

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KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012 1 TO-220F 2.Collector 3.Emitter 1.Base www.DataSheet4U.com PNP Epitaxial S

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isc Silicon PNP Power Transistor KSB1017 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Compl

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SPECIFICATION FOR APPROVAL DELTA DOC CENTER CUSTOMER: STD DESCRIPTION: DC FAN CUSTOMER P/N: DELTA MODEL: KSB0505HA-G303 SAMPLE ISSUE DATE: 0

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KSB1116S KSB1116S Audio Frequency Power Amplifier & Medium Speed Switching 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transist

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KSB1151 KSB1151 Feature • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.3W (Ta=25°C) • Compleme

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KSX13005A Series KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A General D

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KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A 1 TO-92 1. Emitter 2. Collector

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KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A 1 TO-92 1. Emitter 2. Collector

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KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Abs

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KSB772 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126 PNP 。Silicon PNP transistor in a TO-126 Plastic Package.  / Features VCE(sat),hFE 。

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KSB & KSF Series Low-profile Tact Switch Features/Benefits • Low profile • Protected against flux • KSB without top sealing • KSF with top sealing • R

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KSB & KSF Series Low-profile Tact Switch Features/Benefits • Low profile • Protected against flux • KSB without top sealing • KSF with top sealing • R

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KSB1149 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C) 1

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isc Silicon PNP Darlington Power Transistor KSB601 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Volta

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KSB906 KSB906 Low Frequency Power Amplifier • Low Collector- Emitter Saturation Voltage • Complement to KSD1221 1 I-PAK 1. Base 2. Collector 3. Em

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KSX13003C Series KSB13003C KSU13003C NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A General Description • High voltage, High speed p

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