Junction Datasheet | Specifications & PDF Download

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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EVALUATION KIT AVAILABLE Click here to ask about the production status of specific part numbers. MAX6675 Cold-Junction-Compensated K-Thermocoupleto

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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Microwave Hybrid Junction 30 MHz - 3 GHz Features q q H-183-4 V2.00 C-11 0°–180° Hybrid Seven Octave Frequency Range Guaranteed Specifications* Di

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www.eicsemi.com GN1A - GN13 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * Glass passivated junction chip * High current capability * High reliabi

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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U05GU4B48 SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK Reverse Voltage - 400 Volts Forward Current - 0.5 Ampere Application: TELCOMMUNICATION APPLIC

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Unijunction Transistor Description: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circ

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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UHF Hybrid Junction 5 MHz - 1 GHz Features q q q H-1-4 V2.00 C-33 Broad Frequency Range 0° - 180° Hybrid with High Isolation MIL-STD-202 Screening

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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www.eicsemi.com GN1A - GN13 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * Glass passivated junction chip * High current capability * High reliabi

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www.eicsemi.com 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * G

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www.eicsemi.com 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * G

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www.eicsemi.com 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * G

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www.eicsemi.com 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * G

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www.eicsemi.com 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * G

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H-183-4 Microwave Hybrid Junction, 30 MHz - 3 GHz Features  0o - 180o Hybrid  Seven Octave Frequency Range C-11 Rev. V2 Guaranteed Specifications

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