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HCA60R070F - 600V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Fast Recovery Time Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 42 70 106 Unit V A mΩ nC.

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Datasheet preview – HCA60R070F

Datasheet Details

Part number HCA60R070F
Manufacturer SemiHow
File Size 296.00 KB
Description 600V N-Channel Super Junction MOSFET
Datasheet download datasheet HCA60R070F Datasheet
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Full PDF Text Transcription

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Fast Recovery Time Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 42 70 106 Unit V A mΩ nC Application • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC to DC Converters • Telecom, Solar Package & Internal Circuit TO-247 SYMBOL GD S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM1) EAS2) IAR dv/dt dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - P
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