isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations fo

isc N-Channel MOSFET Transistor 2SK2082-01 DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·100% avalanche tested ·Minimum Lot

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1603 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot varia

isc N-Channel MOSFET Transistor 2SK2147-01 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed

isc N-Channel MOSFET Transistor 2SK4202 FEATURES ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Res

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1378 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Vo

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations for

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK962 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Volt

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L

isc N-Channel MOSFET Transistor 2SK1518 ESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variat

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

isc N-Channel MOSFET Transistor 2SK1200 DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·M

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variations for

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum