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2SK1876 - N-Channel MOSFET Transistor

Description

Drain Current ID= 10A@ TC=25℃ Drain Source Voltage : VDSS= 450V(Min) Fast Switching Speed Low on-resistance For switchinggregulator,DC-DC Converter Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power swi

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Fast Switching Speed ·Low on-resistance ·For switchinggregulator,DC-DC Converter ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
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