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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK1875
High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
2SK1875
Unit: mm
· High |Yfs|: |Yfs| = 25 mS (typ.) · Low Ciss: Ciss = 7.5 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-20 10 100 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
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TOSHIBA
2-2E1B
Weight: 0.006 g (typ.