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l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rat...
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9 Hits
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab ca...
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9 Hits
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z z z z
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min
300 2500
0.4/6 Nm/lb-in
z
Silicon chip on Direct-Copper-B...
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8 Hits
International Standard Packages Low QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings...
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8 Hits
z z
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-220 TO-263 (TO-220)
300 260
1.13/10 Nm/lb.in. 4 3 g g
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z z z
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220)
300 ...
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7 Hits
• Silicon chip on Direct-Copper-Bond
Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force
300 260 250...
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6 Hits
z International Standard Package z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low R...
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6 Hits
z z
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 50/60Hz IISOL ≤ 1mA
www.DataSheet4U.net
300 260 2500 3000 1.5/13 1.3/...
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z z
D = Drain TAB = Drain
Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) Mounting force (PLUS 220) TO-247 PLUS...